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| FDD5614P May 2005 FDD5614P 60V P-Channel PowerTrench(R) MOSFET General Description This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications. Features * -15 A, -60 V. RDS(ON) = 100 m @ VGS = -10 V RDS(ON) = 130 m @ VGS = -4.5 V * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter * Power management * Load switch S D G S TO-252 D G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -60 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W -15 -45 42 3.8 1.6 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 3.5 40 96 C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) C/W C/W C/W Package Marking and Ordering Information Device Marking FDD5614P Device FDD5614P Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation FDD5614P Rev C1(W) FDD5614P Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = -30 V, ID = -4.5 A Min Typ Max Units 90 -4.5 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -48 V, VGS = 20V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V -60 -49 -1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -4.5 A ID = -3.9 A VGS = -4.5 V, VGS = -10 V,ID = -4.5 A,TJ=125C VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -3 A -1 -1.6 4 76 99 137 -3 V mV/C 100 130 185 m ID(on) gFS -20 8 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -30 V, f = 1.0 MHz V GS = 0 V, 759 90 39 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -30 V, VGS = -10 V, ID = -1 A, RGEN = 6 7 10 19 12 14 20 34 22 24 ns ns ns ns nC nC nC VDS = -30V, VGS = -10 V ID = -4.5 A, 15 2.5 3.0 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.2 A (Note 2) -3.2 -0.8 -1.2 A V FDD5614P Rev C1(W) FDD5614P Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD RDS( ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD5614P Rev C1(W) FDD5614P Typical Characteristics 15 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V ID, DRAIN CURRENT (A) 12 -6.0V -4.0V -4.5V -3.5V 9 1.8 VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V -10V 6 -3.0V 3 -2.5V 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = -4.5A VGS = -10V ID = -2.3 A 0.3 0.2 TA = 125oC 0.1 TA = 25oC 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15 TA = -55oC 25 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = -5V ID, DRAIN CURRENT (A) 12 VGS = 0V 10 TA = 125oC 1 25oC -55oC 125oC 9 6 0.1 3 0.01 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD5614P Rev C1(W) FDD5614P Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = -4.5A 8 VDS = -40V 6 -20V -30V 1000 f = 1MHz VGS = 0 V 800 CAPACITANCE (pF) CISS 600 4 400 2 200 CRSS COSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0 10 20 30 40 50 60 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC P(pk), PEAK TRANSIENT POWER (W) 40 Figure 8. Capacitance Characteristics. 30 SINGLE PULSE RJA = 96C/W TA = 25C 20 0.1 10 0 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 96C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD5614P Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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